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Product Description
Sirenza Microdevices' SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
SGA-9189 SGA-9189Z
Pb
RoHS Compliant & Green Package
Medium Power Discrete SiGe Transistor
Product Features
Typical Gmax, OIP3, P1dB @ 5V,180mA
25 23 21 19 17 15 13 11 9 7 5
Gmax
OIP3, P1dB (dBm)
OIP3
P1dB
44 42 40 38 36 34 32 30 28 26 24
Gmax (dB)
* * * * * * * *
Available in RoHS compliant Green packaging 50-3000 MHz Operation 39 dBm Ouput IP3 Typical at 1.96 GHz 12.2 dB Gain Typical at 1.96 GHz 25.5 dBm P1dB Typical at 1.96 GHz 2.1 dB NF Typical at 0.9 GHz Cost Effective 3-5 V Operation
Applications
* * * * Wireless Infrastructure Driver Amplifiers CATV Amplifiers Wireless Data, WLL Amplifiers AN-021 contains detailed application circuits
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Symbol
D evice C haracteristics, T = 25C VCE = 5V, ICQ =180mA (unless otherw ise noted) Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* Power Gai n ZS=ZSOPT, ZL=ZLOPT Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Output Thi rd Order Intercept Poi nt ZS=ZSOPT, ZL=ZLOPT, POUT= +10 dBm per tone Noi se Fi gure ZS=ZSOPT, ZL=ZLOPT C ollector - Emi tter Breakdown Voltage D C current gai n Thermal Resi stance (juncti on-to-lead) Operati ng Voltage (collector-to-emi tter) Operati ng C urrent
Test Frequency [1] 100% Tested [2] Sample Tested f = 900 MHz f = 1960 MHz f = 900 MHz [1] f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz
U nits
Min.
Typ. 20.5 13.2
Max.
GMAX G P 1dB OIP3 NF B V C EO hFE Rth V CE I
dB dB dB m dB m dB V 7.5 100 C /W V mA 155 17.5 11.2 23.5 36.5
19.0 12.2 25.8 25.5 40.0 39.0 2.1 2.6 8.5 180 47
20.5 13.2
300
5.5 180 195
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-101497 Rev H
SGA-9189 Medium Power Discrete SiGe Transistor Maximum Recommended Operational Dissipated Power
1.20
Total Dissipated Power (W)
Absolute Maximum Ratings
Parameter
Max Base Current (IB) Max Device Current (ICE) Max Collector-Emitter Voltage (VCEO) Max Collector-Base Voltage (VCBO) Max Emitter-Base Voltage (VEBO) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition, ZL = 50 Ohms
Absolute Limit
5 mA 200 mA 7V 20 V 4.8 V +150C See Graph +150C
1.00 0.80 0.60 0.40 0.20 0.00 -40 -10 20 50 80 110 140 Lead Temperature (C)
Operational Limit (Tj<130C)
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l
Typical Performance - Engineering Application Circuits (See AN-021)
Freq (MHz ) 945 1960 2140 2440
1
VCE (V) 5 5 5 5
ICQ (mA) 184 179 180 180
P1dB OIP31 (dBm) (dBm) 25.8 25.5 25.4 25.4 39.5 40.0 39.0 40.0
Gain (dB) 18.8 12.2 11.3 10.2
S11 (dB) -14 -23 -20 -20
S 22 (dB) -26 -21 -14 -17
NF (dB) 2.1 2.4 2.6 2.7
ZSOPT ( ) 6.8 - j0.85 7.6 - j11.2 18.1 + j3.4 5.6 - j15.1
ZLOPT ( ) 16 + j5.9 22.8 + j0.7 23.8 - j9.0 23.1 - j2.7
POUT= +10 dBm per tone for VCE=5V, 1 MHz tone spacing
Freq (MHz ) 945 1960 2440
2
VCE (V) 3 3 3
ICQ (mA) 165 162 165
P1dB OIP32 (dBm) (dBm) 22.1 22.4 23.2 34.3 35.0 35.3
Gain (dB) 17.7 11.8 9.9
S11 (dB) -18 -18 -20
S 22 (dB) -11 -16 -15
NF (dB) 2.1 2.2 2.6
ZSOPT ( ) 9.6 - j1.6 7.8 - j13.1 8.1 - j16.0
ZLOPT ( ) 11.0 + j1.4 19.3 - j2.9 21.0 - j6.5
POUT= +6 dBm per tone for VCE=3V, 1 MHz tone spacing
Data above represents typical performance of the application circuits noted in Application Note AN-021. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative.
C
B ZLOPT
ZSOPT
E
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev H
2
SGA-9189 Medium Power Discrete SiGe Transistor
De-embedded S-Parameters (ZS=ZL=50 Ohms, VCE=5V, ICQ=185mA, 25 C)
45 35
Insertion Gain & Isolation
5 -5
Gain vs. Temp (dB)
30 25 20 15
Insertion Gain vs Temperature
Isolation (dB)
Gain (dB)
25 15 5
Gain
Isolation
-15 -25
Gmax
-35 -45
-5 0 1 2 3 4 5 6 7 8
10 5 0 -5 -10 0 1 2 3 4
T = -40, 25, 85C
5
6
7
8
Frequency (GHz) S11 vs Frequency
1.0 0.5
Frequency (GHz) S22 vs Frequency
1.0 2.0 0.5 2.0
4 GHz 5 GHz 3 GHz
4 GHz 3 GHz
5.0 0.2
5 GHz
0.2
2 GHz 8 GHz 1 GHz
5.0
2 GHz 8 GHz 1 GHz
0.0 0.2 0.5 1.0 2.0 5.0 inf 0.0 0.2 0.5 1.0 2.0 5.0 inf
S11
0.2 5.0 0.2 5.0
50 MHz
S22 50 MHz
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with Z S=Z L=50. The data represents typical performace of the device. De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
400 350 300
DC-IV Curves
Ib = 0.4 - 3.6 mA , 0.4 mA steps T=25C
IC (mA)
250 200 150 100 50 0 0 2 4 6 8
VCE (V)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev H
3
SGA-9189 Medium Power Discrete SiGe Transistor
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Pin Description
Pin #
1 2 3 4
P art N umber S GA -9189 S GA -9189Z
R eel S iz e 13" 13"
D evices/R eel 3000 3000
Function
B a se Emitter Collector Emitter RF Input
Description
Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. RF Output Same as Pin 2
Part Symbolization The part will be symbolized with the "P1" ("P1Z" for RoHS version) designator and a dot signifying pin 1 on the top surface of the package.
Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items should be implemented to maximize MTTF and RF performance. 1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL] 2. Incorporate a large ground pad area with multiple platedthrough vias around pin 4 of the device. [CRITICAL] 3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as close to the ground tab (pin 4) as possible. [RECOMMENDED] 4. Use 2 ounce copper to improve the PCB's heat spreading capability. [RECOMMENDED]
Package Dimensions
.161
3
.177 .068
P1
.096
.016 .019 .118
4
1
2
.041
.059
.015
DIMENSIONS ARE IN INCHES
Recommended Mounting Configuration for Optimum RF and Thermal Performance
Ground Plane Plated Thru Holes (0.020" DIA) SOT-89 Package
Machine Screws
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev H
4

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